Tsmc Technology Symposium 2012 Pdf Official
This is the most controversial section of the . TSMC presented 20nm as a "half-node" that offered 1.9x gate density and 25% speed gain over 28nm, but critically— without FinFETs. History proved 20nm had a short life (only used in Apple’s A8 and a few GPUs), but the 2012 PDF shows TSMC’s rationale: 20nm was a necessary lithography and double-patterning training ground for 16nm.
The most sought-after slides in the PDF concern TSMC’s first generation of 3D transistors. At the 2012 symposium, TSMC revealed that its FinFET would debut at 16nm (not 20nm). Key data points in the PDF include:
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